Veröffentlichte Artikel

Open list in Research Information System

2023

LoRa Transceiver for Load Monitoring and Control System in Microgrids

I. Mwammenywa, D. Petrov, P. Holle, U. Hilleringmann, in: 2022 International Conference on Engineering and Emerging Technologies (ICEET), IEEE, 2023

DOI

2022

AI Assisted Interference Classification to Improve EMC Troubleshooting in Electronic System Development

J. Maalouly, D. Hemker, C. Hedayat, C. Rückert, I. Kaufmann, M. Olbrich, S. Lange, H. Mathis, in: 2022 Kleinheubach Conference, IEEE, 2022

Abstract

In this paper, machine learning techniques will be used to classify different PCB layouts given their electromagnetic frequency spectra. These spectra result from a simulated near-field measurement of electric field strengths at different locations. Measured values consist of real and imaginary parts (amplitude and phase) in X, Y and Z directions. Training data was obtained in the time domain by varying transmission line geometries (size, distance and signaling). It was then transformed into the frequency domain and used as deep neural network input. Principal component analysis was applied to reduce the sample dimension. The results show that classifying different designs is possible with high accuracy based on synthetic data. Future work comprises measurements of real, custom-made PCB with varying parameters to adapt the simulation model and also test the neural network. Finally, the trained model could be used to give hints about the error’s cause when overshooting EMC limits.

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

Abstract

DOI

In this work, methods will be evaluated to numerically calculate the passive electrical parameters of planar coils. These parameters can then be used to optimize inductive applications such as wireless power transmission. The focus here will be on inductive localization, which uses high-frequency magnetic fields and the resulting induced voltage to provide localization through the coupling parameter mutual inductance. To achieve localization with high accuracy and best possible operation (resonance, signal strength, etc.), the coil parameters need to be well known. For this reason, some numerical methods for the calculation of these quantities are presented and validated. In addition, the physical effects are thereby considered in more detail, allowing the localization procedure to be better optimized compared to simulative black-box methods. The goal should be a dedicated simulation platform for planar coils to be able to develop training data for neural networks and to test and optimize localization algorithms.

Detection of Defects on Irregularly Structured Surfaces using Supervised and Semi-Supervised Learning Methods

T. Sander, S. Lange, U. Hilleringmann, V. Geneiß, C. Hedayat, H. Kuhn, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

Abstract

DOI

In the manufacture of real wood products, defects can quickly occur during the production process. To quickly sort out these defects, a system is needed that finds damage in the irregularly structured surfaces of the product. The difficulty in this task is that each surface is visually different and no standard defects can be defined. Thus, damage detection using correlation does not work, so this paper will test different machine learning methods. To evaluate different machine learning methods, a data set is needed. For this reason, the available samples were recorded manually using a static fixed camera. Subsequently, the images were divided into sub-images, which resulted in a relatively small data set. Next, a convolutional neural network (CNN) was constructed to classify the images. However, this approach did not lead to a generalized solution, so the dataset was hashed using the a- and pHash. These hash values were then trained with a fully supervised system that will later serve as a reference model, in the semi-supervised learning procedures. To improve the supervised model and not have to label every data point, semi-supervised learning methods are used in the following. For this purpose, the CEAL method (wrapper method) is considered in the first and then the Π-Model (intrinsically semi-supervised).

LoRa-based Demand-side Load Monitoring and Management System for Microgrids in Africa

I. Mwammenywa, G.M. Kagarura, D. Petrov, P. Holle, U. Hilleringmann, in: 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), IEEE, 2022

DOI

Far-field Calculation from magnetic Huygens Box Data using the Boundary Element Method

C. Marschalt, D. Schroder, S. Lange, U. Hilleringmann, C. Hedayat, H. Kuhn, D. Sievers, J. Forstner, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Detection of Defects on Irregularly Structured Surfaces using Supervised and Semi-Supervised Learning Methods

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

2021

Development of Methods for Coil-Based Localization by Magnetic Fields of Miniaturized Sensor Platforms in Bioprocesses

S. Lange, D. Schröder, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

Abstract

DOI

In this publication important aspects for the implementation of inductive locating are explained. The miniaturized sensor platform called Sens-o-Spheres is used as an application of this locating method. The sensor platform is applied in bioreactors in order to obtain the environmental parameters, which makes a localization by magnetic fields necessary. Since the properties of magnetic fields in the localization area are very different from the wave characteristics, the principle of inductive localization is investigated in this publication and explained by using electrical equivalent circuit diagrams. Thereby, inductive localization uses the coupling or the mutual inductivities between coils, which is noticeable by an induced voltage. Therefore some properties and procedures are explained to extract the location of Sens-o-Spheres or other industrial sensor platforms from the couplings of the coils. One method calculates the location from an adapted ratio calculation and the other method uses neural networks and stochastic filters to obtain the results. In the end, these results are evaluated and compared.

Detection of Defects on Irregular Structured Surfaces by Image Processing Methods for Feature Extraction

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, F. Gockel, in: 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

Abstract

DOI

During the industrial processing of materials for the manufacture of new products, surface defects can quickly occur. In order to achieve high quality without a long time delay, it makes sense to inspect the work pieces so that defective work pieces can be sorted out right at the beginning of the process. At the same time, the evaluation unit should come close the perception of the human eye regarding detection of defects in surfaces. Such defects often manifest themselves by a deviation of the existing structure. The only restriction should be that only matt surfaces should be considered here. Therefore in this work, different classification and image processing algorithms are applied to surface data to identify possible surface damages. For this purpose, the Gabor filter and the FST (Fused Structure and Texture) features generated with it, as well as the salience metric are used on the image processing side. On the classification side, however, deep neural networks, Convolutional Neural Networks (CNN), and autoencoders are used to make a decision. A distinction is also made between training using class labels and without. It turns out later that the salience metric are best performed by CNN. On the other hand, if there is no labeled training data available, a novelty classification can easily be achieved by using autoencoders as well as the salience metric and some filters.

Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

Abstract

DOI

In this publication, further elements of the newly developed inductive localization in the near field are presented. The advantage of inductive localization is the usage of the magnetic fields, which have a very low influence of non-metallic materials in the environment and thus follows good applications in the area of medicine and biochemistry. This allows a precise localization of sensor platforms in inhomogeneous mixtures of materials, where classical methods have major problems with inhomogeneous dielectric conductivity or density. The calculation of the localization of the searched object differs from other methods such as ultrasound or electromagnetic waves due to the source-free propagation of the magnetic field. Therefore, new mathematical evaluation methods and systematic adaptations are necessary, which are presented in this paper in circuit analysis. For this purpose, the exact circuit influences of one coil and the influence of another coil are investigated and which resonance circuit should be selected for both coils for a inductive localization with optimized signal strength.

Local Power Control using Wireless Sensor System for Microgrids in Africa

U. Hilleringmann, D. Petrov, I. Mwammenywa, G.M. Kagarura, IEEE, 2021

Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Low-Cost NB-IoT Microgrid Power Quality Monitoring System

D. Petrov, K. Kroschewski, I. Mwammenywa, G.M. Kagarura, U. Hilleringmann, in: 2021 IEEE Sensors, IEEE, 2021

DOI

Microcontroller Firmware Design for Industrial Wireless Sensors

D. Petrov, K. Kroschewski, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Influence of electrode metallization on thin-film transistor performance

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

Detection of Defects on Irregular Structured Surfaces by Image Processing Methods for Feature Extraction

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, F. Gockel, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI

Development of Methods for Coil-Based Localization by Magnetic Fields of Miniaturized Sensor Platforms in Bioprocesses

S. Lange, D. Schroder, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI

ZnO nanoparticle films as active layer for thin film transistors

U. Hilleringmann, in: Nanostructured Zinc Oxide, Elsevier, 2021

DOI

Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Integration Process for Self-aligned Sub-µm Thin-Film Transistors for Flexible Electronics

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), IEEE, 2021

DOI

A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

I.R. Kaufmann, O. Zerey, T. Meyers, J. Reker, F. Vidor, U. Hilleringmann, Nanomaterials (2021), 11(5), 1188

Abstract

DOI

<jats:p>Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.</jats:p>

Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Local Power Control using Wireless Sensor System for Microgrids in Africa

U. Hilleringmann, D. Petrov, I. Mwammenywa, G.M. Kagarura, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

The Viability of a Non-Flow Capacitive Biosensing Microsystem for Whole Cell Counting

G. Andrews, U. Hilleringmann, T. Joubert, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

The Viability of a Non-Flow Capacitive Biosensing Microsystem for Whole Cell Counting

G. Andrews, U. Hilleringmann, T. Joubert, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

Projekt Art-D Grids: Nachhaltige und stabile Microgrids in Afrika - eine Plattform für Forschung und Lehre für die Entwicklung

S. Krauter, J. Böcker, C. Freitag, B. Hehenkamp, U. Hilleringmann, K. Temmen, T. Klaus, N. Rohrer, S. Lehmann, in: Tagungsband des 36. PV-Symposiums, 18.-26 Mai 2021, Conexio, 2021, pp. 305-309

Projekt Art-D Grids: Nachhaltige und stabile Microgrids in Afrika - eine Plattform für Forschung und Lehre für die Entwicklung

S. Krauter, J. Böcker, C. Freitag, B. Hehenkamp, U. Hilleringmann, K. Temmen, T. Klaus, N. Rohrer, S. Lehmann, in: Tagungsband 36. PV-Symposium / BIPV-Forum 18-26. Mai 2021, 2021

2020

Investigation of the Surface Equivalence Principle on a Metal Surface for a Near-Field to Far-Field Transformation by the NFS3000

S. Lange, D. Schroder, C. Hedayat, C. Hangmann, T. Otto, U. Hilleringmann, in: 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, IEEE, 2020

Abstract

DOI

In this publication, the near-field to far-field transformation using the self-built near-field scanner NFS3000 is examined with regard to its geometry. This device allows to measure electric and magnetic fields in small distances to the DUT (Device under Test) with high geometric precision and high sensitivity. Leading to a fast examination of EMC (Electromagnetic Compatibility) problems, because the electromagnetic properties are better understandable and therefore easier to solve than e.g. measurements in a far-field chamber. In addition, it is possible to extrapolate the near-fields into the far-field and to determine the radiation pattern of antennas and emitting objects. For this purpose, this paper deals with the basis of this transformation, the so-called surface equivalence theorem. This principle is then adapted to the measurement of near-field scanners and implemented accordingly. Due to the non-ideal design of the near-field scanner, the effects on a far-field transformation are finally presented and discussed.

Investigation of the Surface Equivalence Principle on a Metal Surface for a Near-Field to Far-Field Transformation by the NFS3000

S. Lange, D. Schroder, C. Hedayat, C. Hangmann, T. Otto, U. Hilleringmann, in: 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, IEEE, 2020

DOI

27th European Solid-State Device Research Conference

U. Hilleringmann, IEEE, 2020

DOI

Designing Mixed-Signal PLLs regarding Multiple Requirements taking Non-Ideal Effects into Account

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), IEEE, 2020

DOI

Inductive Locating Method to Locate Miniaturized Wireless Sensors within Inhomogeneous Dielectrics

S. Lange, D. Schroder, C. Hedayat, T. Otto, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), IEEE, 2020

DOI

Water-based primary cell for powering of wireless sensors

D. Petrov, U. Hilleringmann, in: 2020 IEEE SENSORS, IEEE, 2020

DOI

2019

Method of superposing a multiple driven magnetic field to minimize stray fields around the receiver for inductive wireless power transmission

S. Lange, M. Büker, D. Sievers, C. Hedayat, J. Förstner, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, VDE VERLAG GMBH, 2019, pp. 1-4

Abstract

This paper presents a new methodology by using a multiple coil array for energy transmission. The complex current strengths of the transmitting coil array are calculated by having the knowledge about of the mutual inductances and the symmetries of the transmitting coil array, so that its resulting magnetic field mainly penetrates only the receiving coil and is strongly attenuated outside. This method is used for an optimized wireless energy transmission but can also be implemented for other inductive applications.

Inductive Locating Method to Locate Miniaturized Wireless Sensors within Inhomogeneous Dielectrics

S. Lange, D. Schröder, C. Hedayat, T. Otto, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), 2019

Abstract

DOI

For the measurement of process data in bioreactors, very small wireless sensors are currently under development to replace the conventional rod probes. The so-called Sens-o-Spheres measure the temperature and in future the oxygen content and the pH of fluids. In order to evaluate the distribution of the measured values within the process, it is necessary to locate the wireless sensors. Because of the small size of the sphere (diameter 8 mm), inhomogeneous ambient media and the size of the reactor (less than 2 m), an inductive locating by magnetic fields with a frequency of f = 13.56 MHz is necessary. Since the behaviour of the magnetic field is very different from that of the electromagnetic wave, new locating methods are required, which are presented in this paper.

Self-aligned organic thin-film transistors for flexible electronics

T. Meyers, J. Reker, J. Temme, F.F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Inorganic p-channel thin-film transistors using CuO nanoparticles

J. Reker, T. Meyers, F..F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Nanoparticles and organic semiconductors for flexible electronics

U. Hilleringmann, J. Reker, F.F. Vidor, T. Meyers, T..H. Joubert, P. Bezuidenhout, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Improved organic thin-film transistor performance by dielectric layer patterning

J. Temme, T. Meyers, J. Reker, F.F. Vidor, J. Vollbrecht, H. Kitzerow, J. Paradies, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Mechanical deformation on nanoparticle-based thin-film transistors

F.F. Vidor, T. Meyers, J. Reker, K. Müller, G.I. Wirth, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Oxygen detection with zinc oxide nanoparticle structures

T. Schwabe, A. Balke, P. Bezuidenhout, J. Reker, T. Meyers, T. Joubert, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Characterization of inkjet-printed dielectric on different substrates

J. Kruger, P.H. Bezuidenhout, U. Hilleringmann, T. Joubert, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Method of superposing a multiple driven magnetic field to minimize stray fields around the receiver for inductive wireless power transmission

S. Lange, M. Bueker, D. Sievers, C. Hedayat, J. Foerstner, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

Characterization of H-field Probes regarding Unwanted Field Suppression using Different Calibration Structures

D. Schroeder, C. Hangmann, C. Hedayat, T. Otto, U. Hilleringmann, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

Wireless power supply for a RFID based sensor platform

M. Schmidt, D. Petrov, C. Hedayat, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

Characterization of inkjet-printed dielectric on different substrates

J. Kruger, P.H. Bezuidenhout, U. Hilleringmann, T. Joubert, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

RFID based sensor platform for industry 4.0 application

D. Petrov, M. Schmidt, U. Hilleringmann, C. Hedayat, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

2018

Silizium-Halbleitertechnologie

U. Hilleringmann, Springer Fachmedien Wiesbaden, 2018

DOI

Ätztechnik

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI

Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors

T.E. Becker, F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2018 IEEE 19th Latin-American Test Symposium (LATS), IEEE, 2018

DOI

Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors

T.E. Becker, F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2018 IEEE 19th Latin-American Test Symposium (LATS), IEEE, 2018

DOI

Oxidation des Siliziums

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI

Liquid crystalline dithienothiophene derivatives for organic electronics

J. Vollbrecht, P. Oechsle, A. Stepen, F. Hoffmann, J. Paradies, T. Meyers, U. Hilleringmann, J. Schmidtke, H. Kitzerow, Organic Electronics (2018), 61, pp. 266-275

DOI

2017

Surface Cleaning and Modification by High Intense UV-Irradition for TiO2 Nanoparticle Films in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 102-107

DOI

Low-voltage C 8 -BTBT thin-film transistors for flexible electronics

T. Meyers, F.F. Vidor, C. Puls, U. Hilleringmann, Materials Today: Proceedings (2017), 4, pp. S232-S236

DOI

Zinc Oxide Transistors

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

Deposition of ZnO nanoparticles for thin-film transistors by doctor blade process

J. Reker, T. Meyers, F.F. Vidor, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

Design and Implementation of a High Temperature Control Monitoring Applied to Micro Thermoelectric Generators

S. Jucá, P. Carvalho, R. Pereira, D. Petrov, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 712-717

DOI

Increasing the Efficiency of Solar Cells by Combining Silicon- and Dye Sensitized Devices

B. Ohms, A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality (2017), pp. 469-473

DOI

Self-aligned ZnO nanoparticle-based TFTs for flexible electronics

F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

Conclusion and Future Perspectives

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

TEGs as self-sufficient power supply for sensors and microelectromechanical systems

M. Schönhoff, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI

Complementary field-effect transistors for flexible electronics

U. Hilleringmann, F.F. Vidor, T. Meyers, in: SPIE Proceedings, SPIE, 2017

DOI

Mass production of magnesium silicide as a TEG material

M. Schonhoff, U. Hilleringmann, J. de Boor, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics

F.F. Vidor, G.I. Wirth, U. Hilleringmann, Springer International Publishing, 2017

DOI

Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State Electronics (2017), 137, pp. 16-21

DOI

Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: IEEE Xplore, MikroSystemTechnik 2017, IEEE, 2017, pp. 1-4

Improvements

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

Integration of ZnO nanoparticle transistors on freestanding flexible substrates

F.F. Vidor, T. Meyers, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI

Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: MikroSystemTechnik 2017; Congress, 2017, pp. 1-4

2016

Event Driven Modeling and Characterization of the Second Order Voltage Switched Charge Pump PLL

E. Ali, C. Hangmann, C. Hedayat, F. Haddad, W. Rahajandraibe, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2016), 63(3), pp. 347-358

DOI

Influence of Traps on the Characteristics of ZnO Nanoparticles Thin-Film Transistors

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6

Self-aligning integration technique for organic electronics

T. Meyers, F.F. Vidor, S.F. Kaijage, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-4

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

T. Meyers, F.F. Vidor, K. Brassat, J.K. Lindner, U. Hilleringmann, Microelectronic Engineering (2016), 174, pp. 35-39

DOI

Microstructured Metal Layers in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6

ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering (2016), 159, pp. 155-158

DOI

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

F. Vidor, T. Meyers, U. Hilleringmann, Nanomaterials (2016), 6(9), 154

DOI

Organic Field-Effect and Nanoparticle Thin-Film Transistors: Static Model

A. Romero, J. Gonzalez, U. Hilleringmann, P. Gloesekoetter, in: ANALOG 2016; 15. ITG/GMM-Symposium, 2016, pp. 1-6

Influence of UV irradiation and humidity on a low-cost ZnO nanoparticle TFT for flexible electronics

F.F. Vidor, T. Meyers, U. Hilleringmann, G.I. Wirth, in: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), IEEE, 2016

DOI

Improved rf design using precise 3d near-field measurements and near-field to far-field transformations

C. Hangmann, T. Mager, S. Khan, C. Hedayat, U. Hilleringmann, in: Smart System Integration-International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2016

High-Q whispering gallery microdisk resonators based on silicon oxynitride

T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, A. Zrenner, Journal of Luminescence (2016), 191, pp. 131-134

DOI

2015

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

F. Vidor, T. Meyers, U. Hilleringmann, Electronics (2015), 4(3), pp. 480-506

DOI

Silicon Nanoparticles contacted by metal nanogaps for FET applications

K. Wolff, U. Hilleringmann, 2015

Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology

U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to Machine Communications (2015), 1(3), pp. 197-214

DOI

Application of side-wall deposition and etch-back technology for nanometer scale device integration

U. Hilleringmann, F. Vidor, F. Assion, in: Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014), IEEE, 2015

DOI

Extended event-driven modeling of a ΣΔ-fractional-N PLL including non-ideal effects

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), IEEE, 2015

DOI

Fast and accurate event-driven simulation of a mixed-signal system using the example of a PLL

C. Hangmann, C. Hedayat, U. Hilleringmann, in: Proc. Int. Conf. Exhib. Integr. Issues Miniatured Syst., 2015

2014

Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics

F. Vidor, G. Wirth, U. Hilleringmann, Microelectronics Reliability (2014), 54(12), pp. 2760-2765

DOI

Stability Analysis of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations

C. Hangmann, C. Hedayat, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2014), 61(9), pp. 2569-2577

DOI

Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric Generators

F. Assion, V. Geneiß, M. Schönhoff, C. Hedayat, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 83–88

Abstract

The wide usage of thermoelectric generators (TEG) is still blocked by very high product costs. This paper presents anodized aluminum (Al) as an effective and cheap alternative for ceramics like alumina (Al2O3) or aluminum nitride (AlN). Al has a significantly higher thermal conductivity as both named ceramics. In addition, the lower thermal stability of Al is still high enough to work with bismuth telluride based modules, which are most common. To show the advantages of the changed substrate, finite element method (FEM) simulations were performed. These simulations show that by changing the cold side substrate material the temperature drop across the substrate is reduced by 60 K. This correlates to a theoretical power gain of more than 20 {%}. Furthermore, Al can be shaped much easier than a ceramic material. The biggest advantage is obviously the price. Anodized Al is around twenty times cheaper than Al2O3. To demonstrate the easy fabrication of the proposed substrate, samples were prepared only with widely used processes like those used for conventional printed circuit boards.

A Flexible Measurement System for the Characterization of Thermoelectric Materials

M. Schönhoff, F. Assion, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 53–60

Abstract

The figure of merit needs to be determined to rate the quality of thermoelectric materials (TM). Therefore, it is necessary to measure all involved parameters—the Seebeck coefficient (S), the thermal conductivity ($\lambda$), and the electrical conductivity ($\sigma$).

Replacing TCO electrodes in dye sensitized solar cells by metal grids

U. Hilleringmann, A. Kleine, in: SPIE Proceedings, SPIE, 2014

DOI

Lithografie

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2014

DOI

Random telegraph signal in nanoparticulated ZnO thin-film transistors

F. Vidor, G. Wirth, U. Hilleringmann, in: The 40th International Conference on Micro and Nano Engineering (MNE2014), 2014

Embedded UHF RFID tag design process for rubber transmission belt using 3D model

K. Kanwar, T. Mager, U. Hilleringmann, V. Geneiss, C. Hedayat, in: 2014 IEEE RFID Technology and Applications Conference (RFID-TA), IEEE, 2014

DOI

Modeling and characterization of CP-PLL phase noise in presence of dead zone

C. Hangmann, I. Wullner, C. Hedayat, U. Hilleringmann, in: 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), IEEE, 2014

DOI

Titanium disilicide as hot side metallization layer for thermoelectric generators

U. Hilleringmann, M. Schonhoff, F. Assion, in: 2013 Africon, IEEE, 2014

DOI

Max number of publications reached - all publications can be found in our Research Infomation System.

Open list in Research Information System

2017

Surface Cleaning and Modification by High Intense UV-Irradition for TiO2 Nanoparticle Films in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 102-107

DOI

Low-voltage C 8 -BTBT thin-film transistors for flexible electronics

T. Meyers, F.F. Vidor, C. Puls, U. Hilleringmann, Materials Today: Proceedings (2017), 4, pp. S232-S236

DOI

Zinc Oxide Transistors

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

Deposition of ZnO nanoparticles for thin-film transistors by doctor blade process

J. Reker, T. Meyers, F.F. Vidor, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

Design and Implementation of a High Temperature Control Monitoring Applied to Micro Thermoelectric Generators

S. Jucá, P. Carvalho, R. Pereira, D. Petrov, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 712-717

DOI

Increasing the Efficiency of Solar Cells by Combining Silicon- and Dye Sensitized Devices

B. Ohms, A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality (2017), pp. 469-473

DOI

Self-aligned ZnO nanoparticle-based TFTs for flexible electronics

F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

Conclusion and Future Perspectives

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

TEGs as self-sufficient power supply for sensors and microelectromechanical systems

M. Schönhoff, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI

Complementary field-effect transistors for flexible electronics

U. Hilleringmann, F.F. Vidor, T. Meyers, in: SPIE Proceedings, SPIE, 2017

DOI

Mass production of magnesium silicide as a TEG material

M. Schonhoff, U. Hilleringmann, J. de Boor, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics

F.F. Vidor, G.I. Wirth, U. Hilleringmann, Springer International Publishing, 2017

DOI

Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State Electronics (2017), 137, pp. 16-21

DOI

Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: IEEE Xplore, MikroSystemTechnik 2017, IEEE, 2017, pp. 1-4

Improvements

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

Integration of ZnO nanoparticle transistors on freestanding flexible substrates

F.F. Vidor, T. Meyers, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI

Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: MikroSystemTechnik 2017; Congress, 2017, pp. 1-4

2016

Event Driven Modeling and Characterization of the Second Order Voltage Switched Charge Pump PLL

E. Ali, C. Hangmann, C. Hedayat, F. Haddad, W. Rahajandraibe, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2016), 63(3), pp. 347-358

DOI

Influence of Traps on the Characteristics of ZnO Nanoparticles Thin-Film Transistors

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6

Self-aligning integration technique for organic electronics

T. Meyers, F.F. Vidor, S.F. Kaijage, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-4

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

T. Meyers, F.F. Vidor, K. Brassat, J.K. Lindner, U. Hilleringmann, Microelectronic Engineering (2016), 174, pp. 35-39

DOI

Microstructured Metal Layers in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6

ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering (2016), 159, pp. 155-158

DOI

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

F. Vidor, T. Meyers, U. Hilleringmann, Nanomaterials (2016), 6(9), 154

DOI

Organic Field-Effect and Nanoparticle Thin-Film Transistors: Static Model

A. Romero, J. Gonzalez, U. Hilleringmann, P. Gloesekoetter, in: ANALOG 2016; 15. ITG/GMM-Symposium, 2016, pp. 1-6

Influence of UV irradiation and humidity on a low-cost ZnO nanoparticle TFT for flexible electronics

F.F. Vidor, T. Meyers, U. Hilleringmann, G.I. Wirth, in: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), IEEE, 2016

DOI

Improved rf design using precise 3d near-field measurements and near-field to far-field transformations

C. Hangmann, T. Mager, S. Khan, C. Hedayat, U. Hilleringmann, in: Smart System Integration-International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2016

High-Q whispering gallery microdisk resonators based on silicon oxynitride

T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, A. Zrenner, Journal of Luminescence (2016), 191, pp. 131-134

DOI

2015

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

F. Vidor, T. Meyers, U. Hilleringmann, Electronics (2015), 4(3), pp. 480-506

DOI

Silicon Nanoparticles contacted by metal nanogaps for FET applications

K. Wolff, U. Hilleringmann, 2015

Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology

U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to Machine Communications (2015), 1(3), pp. 197-214

DOI

Application of side-wall deposition and etch-back technology for nanometer scale device integration

U. Hilleringmann, F. Vidor, F. Assion, in: Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014), IEEE, 2015

DOI

Extended event-driven modeling of a ΣΔ-fractional-N PLL including non-ideal effects

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), IEEE, 2015

DOI

Fast and accurate event-driven simulation of a mixed-signal system using the example of a PLL

C. Hangmann, C. Hedayat, U. Hilleringmann, in: Proc. Int. Conf. Exhib. Integr. Issues Miniatured Syst., 2015

2014

Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics

F. Vidor, G. Wirth, U. Hilleringmann, Microelectronics Reliability (2014), 54(12), pp. 2760-2765

DOI

Stability Analysis of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations

C. Hangmann, C. Hedayat, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2014), 61(9), pp. 2569-2577

DOI

Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric Generators

F. Assion, V. Geneiß, M. Schönhoff, C. Hedayat, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 83–88

Abstract

A Flexible Measurement System for the Characterization of Thermoelectric Materials

M. Schönhoff, F. Assion, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 53–60

Abstract

Replacing TCO electrodes in dye sensitized solar cells by metal grids

U. Hilleringmann, A. Kleine, in: SPIE Proceedings, SPIE, 2014

DOI

Lithografie

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2014

DOI

Random telegraph signal in nanoparticulated ZnO thin-film transistors

F. Vidor, G. Wirth, U. Hilleringmann, in: The 40th International Conference on Micro and Nano Engineering (MNE2014), 2014

Embedded UHF RFID tag design process for rubber transmission belt using 3D model

K. Kanwar, T. Mager, U. Hilleringmann, V. Geneiss, C. Hedayat, in: 2014 IEEE RFID Technology and Applications Conference (RFID-TA), IEEE, 2014

DOI

Modeling and characterization of CP-PLL phase noise in presence of dead zone

C. Hangmann, I. Wullner, C. Hedayat, U. Hilleringmann, in: 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), IEEE, 2014

DOI

Titanium disilicide as hot side metallization layer for thermoelectric generators

U. Hilleringmann, M. Schonhoff, F. Assion, in: 2013 Africon, IEEE, 2014

DOI

2013

Self-organization of nanospheres in trenches on silicon surfaces

K. Brassat, F. Assion, U. Hilleringmann, J. Lindner, physica status solidi (a) (2013), 210(8), pp. 1485-1489

Abstract

DOI

The selective deposition and self-assembly of nanospheres from a colloidal suspension in trenches on silicon surfaces is investigated using conventional light, confocal laser scanning and scanning electron microscopy. Trenches with widths of one to several nanosphere diameters are formed on silicon surfaces by photolithography and reactive ion etching. The spreading knife convective self-assembly technique is employed to distribute the nanosphere suspension on the pre-patterned surface. It is shown that this technique is particularly useful in combination with a functionalized surface where a selfassembled molecular monolayer changes the contact angle such that sphere deposition takes place almost exclusively in the trenches. By this, lines selectively filled with a chain of beads with a length of 0.5 mm have been achieved.

Self-organization of nanospheres in trenches on silicon surfaces

K. Brassat, F. Assion, U. Hilleringmann, J.K.N. Lindner, physica status solidi (a) (2013), 210(8), pp. 1485-1489

DOI

Titanium Disilicide as High-Temperature Contact Material for Thermoelectric Generators

F. Assion, M. Schönhoff, U. Hilleringmann, Journal of Electronic Materials (2013), 42(7), pp. 1932-1935

DOI

Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI

Design and implementation of a measurement system for automatically measurement of electrical parameters of thermoelectric generators

D. Petrov, F. Assion, U. Hilleringmann, MRS Proceedings (2013), 1490, pp. 191-196

Abstract

DOI

<jats:title>ABSTRACT</jats:title><jats:p>The continues development of thermoelectric generators causes a permanent improvement of their characteristics. New types of thermoelectric generators can work at temperatures up to 1000 K. With this, special measurement equipment is needed to control the electrical parameters of the new developed specimens. The devices must be tested over the whole range of operating temperatures. For each temperature value a series of electrical measurements has to be performed. To establish the maximal output power of the thermoelectric generators, a load resistor with variable resistance has to be connected to the output of thermoelectric generator. The measurement system should measure the electrical current through the load resistor and the voltage over this resistor to determine the device parameters. A large amount of measurement data have to be collected and processed to evaluate the electrical characteristics of the specimen and to present them in graphical form, suitable for the comparison with others specimens.</jats:p>

Formation and Properties of TiSi<sub>2</sub> as Contact Material for High-Temperature Thermoelectric Generators

F. Assion, M. Schönhoff, U. Hilleringmann, MRS Proceedings (2013), 1490, pp. 97-102

Abstract

DOI

<jats:title>ABSTRACT</jats:title><jats:p>Thermoelectric generators (TEG) are capable of transforming waste heat directly into electric power. With higher temperatures the yield of the devices rises which makes high-temperature contact materials important. The formation of titanium disilicide (TiSi<jats:sub>2</jats:sub>) and its properties were analyzed and optimized for the use in TEG. Depending on a direct or an indirect transformation into the C54 crystal structure the process forms a layer with a resistivity of 20-22 μΩcm. Process gases influence the resistivity and result in difference of 20 %. The growing rate of TiSi<jats:sub>2</jats:sub>on silicon dioxide was determined; it shows a strong dependence on the used atmosphere and temperature. A maximum overgrowing length of 30 μm was found.</jats:p>

Electrical characterization of rubber mixture sheets based on a coaxial probe method in combination with 3D electromagnetic simulation model

K. Kanwar, C. Fischer, V. Geneiss, T. Mager, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2012 IEEE International Conference on RFID-Technologies and Applications (RFID-TA), IEEE, 2013

DOI

Enhanced event-driven modeling of a CP-PLL with nonlinearities and nonidealities

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS), IEEE, 2013

DOI

Resistivity reduction in flexible dye sensitized solar cells by UV irradiation and carbon nanotubes

U. Hilleringmann, B. Ohms, A. Kleine, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI

Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor

F.F. Vidor, G. Wirth, F. Assion, K. Wolff, U. Hilleringmann, IEEE Transactions on Nanotechnology (2013), 12(3), pp. 296-303

DOI

Design and analysis of UHF RFID tag for a rubber transmission belt based on 3D electrical model

K. Kanwar, V. Geneiss, T. Mager, S. Scheele, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2013 21st International Conference on Software, Telecommunications and Computer Networks - (SoftCOM 2013), IEEE, 2013

DOI

Designing output-power-optimized thermoelectric generators via analytic and finite element method modelling

F. Assion, C. Fischer, M. Schonhof, U. Hilleringmann, C. Hedayat, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI

Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI

2012

Surface tension and its role for vertical wet etching of silicon

A. Brockmeier, F.J.S. Rodriguez, M. Harrison, U. Hilleringmann, Journal of Micromechanics and Microengineering (2012), 22(12), 125012

DOI

Surface tension and its role for vertical wet etching of silicon

A. Brockmeier, F.J.S. Rodriguez, M. Harrison, U. Hilleringmann, Journal of Micromechanics and Microengineering (2012), 22(12), 125012

DOI

Mikrosystemtechnik auf Silizium

U. Hilleringmann, Vieweg+Teubner Verlag, 2012

DOI

Open list in Research Information System

2011

Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors

F.F. Vidor, G.I. Wirth, K. Wolff, U. Hilleringmann, ECS Transactions (2011), 39(1), pp. 109-115

Abstract

DOI

<jats:p>Due to the electrical, sensory and optical properties the interest on ZnO-based devices including thin-film transistors (TFT) aroused. The main concerns, when using ZnO nanoparticles (NP-ZnO) in TFT, are the low charge carrier mobility and the hysteresis when poly(4-vinylphenol) (PVP) is used as gate dielectric. It is well-known that the mobility in NP-ZnO films can be enhanced by the subsequent hydrothermal decomposition of zinc salts. The electrical behavior as a function of time and temperature is investigated, taking the NP-ZnO without addition of zinc acetate as reference. The addition of zinc acetate leads to a device with better performance, with increased drain current level and without the presence of the hysteresis in the transfer characteristic. The formation reaction was performed at a temperature of 200°C, which enables process compatibility to some plastic substrates.</jats:p>

Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric

K. Wolff, U. Hilleringmann, Solid-State Electronics (2011), 62(1), pp. 110-114

DOI

Characterization of SiON integrated waveguides via FTIR and AFM measurements

T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in: 2011 Semiconductor Conference Dresden, IEEE, 2011

DOI

Modeling and simulation of arbitrary ordered nonlinear charge-pump phase-locked loops

C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2011 Semiconductor Conference Dresden, IEEE, 2011

DOI

Semiconductor nanoparticles for electronic device integration on foils

U. Hilleringmann, K. Wolff, F. Assion, F.F. Vidor, G.I. Wirth, in: IEEE Africon '11, IEEE, 2011

DOI

Plane wave spectrum expansion from near-field measurements on no-planar lattices

C. Reinhold, C. Hangmann, T. Mager, C. Hedayat, U. Hilleringmann, in: Proc. 5th Int. Conf. on electromagnetic Near-field Characterization and Imaging (ICONIC) 2011, 2011, pp. 1–4

Piezoelectric sensor array with evaluation electronic for counting grains in seed drills

S. Meyer zu Hoberge, U. Hilleringmann, C. Jochheim, M. Liebich, in: IEEE Africon '11, IEEE, 2011

DOI

2010

Telemetric surface acoustic wave sensor for humidity

M. Dierkes, U. Hilleringmann, Advances in Radio Science (2010), 1, pp. 131-133

Abstract

DOI

<jats:p>Abstract. Surface acoustic wave sensors consist of a piezoelectric substrate with metal interdigital transducers (IDT) on top. The acoustic waves are generated on the surface of the substrate by a radio wave, as it is well known in band pass filters. The devices can be used as wireless telemetric sensors for temperature and humidity, transmitting the sensed signal as a shift of the sensor’s resonance frequency. </jats:p>

Non-linear behaviour of charge-pump phase-locked loops

C. Wiegand, C. Hedayat, U. Hilleringmann, Advances in Radio Science (2010), 8, pp. 161-166

Abstract

DOI

<jats:p>Abstract. The analysis of the mixed analogue and digital structure of charge-pump phase-locked loops (CP-PLL) is a challenge in modelling and simulation. In most cases the system is designed and characterized using its continuous linear model or its discrete linear model neglecting its non-linear switching behaviour. I.e., the time-varying model is approximated by a time-invariant representation using its average dynamics. Depending on what kind of phase detector is used, the scopes of validity of these approximations are different. Here, a preeminent characterization and simulation technique based on the systems event-driven feature is presented, merging the logical and analogue inherent characteristics of the system. In particular, the high-grade non-linear locking process and the dead-zone are analyzed. </jats:p>

Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications

C. Pannemannn, T. Diekmann, U. Hilleringmann, Advances in Radio Science (2010), 1, pp. 219-221

Abstract

DOI

<jats:p>Abstract. This letter presents organic thin-film-transistors (OTFT) using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V. </jats:p>

Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors

K. Wolff, U. Hilleringmann, in: 2010 Proceedings of the European Solid State Device Research Conference, IEEE, 2010

DOI

Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate

F. Assion, K. Wolff, U. Hilleringmann, in: Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain, 2010, pp. 17

A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS

C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, Smart System Integration SSI 2010 (2010)

Macro-modelling via radial basis functionen nets

C. Wiegand, C. Fischer, R. Kazemzadeh, C. Hedayat, W. John, U. Hilleringmann, Advances in Radio Science (2010), 6, pp. 139-143

Abstract

DOI

<jats:p>Abstract. By the rising complexity and miniaturisation of the device's dimensions, the density of the conductors increases considerably. Referring to this, locally transient interactions between single physical values become apparent. Therefore, for the investigation and optimisation of integrated circuits it is essential to develop suitable models and simulation surroundings which allow for memory and time-efficient calculation of the behaviour. By means of the dynamic reconstruction theory and the radial basis functions nets the so-called black box models are provided. The description of black box models is derived from the input and output behaviour or so-called time series of a dynamic system. Concerning the time series, the black box model adapts its parameters via the extended Kalman filter. This paper provides a modelling approach that enables fast and efficient simulations. </jats:p>

2009

Autonomous Sensor Nodes for Aircraft Structural Health Monitoring

T. Becker, M. Kluge, J. Schalk, K. Tiplady, C. Paget, U. Hilleringmann, T. Otterpohl, IEEE Sensors Journal (2009), 9(11), pp. 1589-1595

DOI

Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand

C. Reinhold, P. Scholz, W. John, U. Hilleringmann, Journal of Communications (2009), 2(6)

DOI

N-type single nanoparticle ZnO transistors processed at low temperature

K. Wolff, U. Hilleringmann, in: 2009 Proceedings of the European Solid State Device Research Conference, IEEE, 2009

DOI

Lock Detection for Charge-Pump Phase-Locked Loops

C. Wiegand, C. Hedayat, U. Hilleringmann, Sophia Antipolis Microelectronics SAME (2009)

2008

Dielectric layers for organic field effect transistors as gate dielectric and surface passivation

T. Diekmann, C. Pannemann, U. Hilleringmann, physica status solidi (a) (2008), 205(3), pp. 564-577

DOI

Noise propagation for induced fast transient impulses on PCB-level

M. Taki, W. John, C. Hedayat, U. Hilleringmann, in: 2007 18th International Zurich Symposium on Electromagnetic Compatibility, IEEE, 2008

DOI

Power management for thermal energy harvesting in aircrafts

T. Becker, M. Kluge, J. Schalk, T. Otterpohl, U. Hilleringmann, in: 2008 IEEE Sensors, IEEE, 2008

DOI

Analysis of Energy Transmission for Inductive Coupled RFID Tags

P. Scholz, C. Reinhold, W. John, U. Hilleringmann, in: 2007 IEEE International Conference on RFID, IEEE, 2008

DOI

2007

Antenna design of HF-RFID tags with high power requirement

P. Scholz, C. Reinhold, W. John, U. Hilleringmann, 2007

Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer

M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters (2007), 90(1), 013501

DOI

Electro-thermo-mechanical analytical modeling of multilayer cantilever microactuator

J. Jiang, U. Hilleringmann, X. Shui, Sensors and Actuators A: Physical (2007), 137(2), pp. 302-307

DOI

Nonlinear Identification of Complex Systems Using Radial Basis Function Networks and Model Order Reduction

C. Wiegand, C. Hedayat, W. John, L. Radic-Weissenfeld, U. Hilleringmann, in: 2007 IEEE International Symposium on Electromagnetic Compatibility, IEEE, 2007

DOI

6I-3 Low-Cost Transceiver Unit for SAW-Sensors Using Customized Hardware Components

P. Scholz, M. Dierkes, U. Hilleringmann, in: 2006 IEEE Ultrasonics Symposium, IEEE, 2007

DOI

Open list in Research Information System

2006

Encapsulating the active Layer of organic Thin-Film Transistors

C. Pannemann, T. Diekmann, U. Hilleringmann, U. Schurmann, M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, in: Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, IEEE, 2006

DOI

2005

Degradation of organic field-effect transistors made of pentacene

C. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research (2005), 19(7), pp. 1999-2002

Abstract

DOI

<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>

On the degradation of organic field-effect transistors

C. Pannemann, T. Diekmann, U. Hilleringmann, in: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004., IEEE, 2005

DOI

Degradation of organic field-effect transistors made of pentacene

C. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research (2005), 19(7), pp. 1999-2002

Abstract

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Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics

M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters (2005), 86(2), 024104

DOI

Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry

R. Scholz, A. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2005

DOI

Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry

R. Scholz, A. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2005

DOI

2004

Ätztechnik

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, 2004, pp. 65–90

Abstract

DOI

In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.

Imprint structured organic thin film transistors as driving circuit in single-use sensor applications

U. Hilleringmann, C. Pannemann, in: Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004

DOI

Piezoresistive pressure sensors in CVD diamond for high-temperature applications

R. Otterbach, U. Hilleringmann, in: Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004

DOI

2003

Masking and etching of silicon and related materials for geometries down to 25 nm

U. Hilleringmann, T. Vieregge, J. Horstmann, in: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003

DOI

Matching analysis of NMOS-transistors with a channel length down to 30 nm

J. Horstmann, U. Hilleringmann, K. Goser, in: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003

DOI

Negative differential resistance in ultrashort bulk MOSFETs

G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser, in: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003

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Nanometer scale organic thin film transistors with Pentacene

C. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering (2003), 67-68, pp. 845-852

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2002

Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip

U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices (2002), 42(5), pp. 841-846

DOI

Characterization of submicron NMOS devices due to visible light emission

I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 21(1-4), pp. 363-366

DOI

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon

U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 19(1-4), pp. 211-214

DOI

System integration of optical devices and analog CMOS amplifiers

E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits (2002), 29(8), pp. 1006-1010

DOI

System integration of optical devices and analog CMOS amplifiers

E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits (2002), 29(8), pp. 1006-1010

DOI

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

J. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 30(1-4), pp. 431-434

DOI

VLSI technologies for artificial neural networks

K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro (2002), 9(6), pp. 28-44

DOI

A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV

V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering (2002), 53(1-4), pp. 525-528

DOI

1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique

J. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 53(1-4), pp. 213-216

DOI

Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique

J. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002

DOI

Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique

DOI

A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits

U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering (2002), 15(1-4), pp. 289-292

DOI

VLSI technologies for artificial neural networks

K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro (2002), 9(6), pp. 28-44

DOI

Nuclear radiation detectors on various type diamonds

F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J. Borany, U. Hilleringmann, W. Fahrner, in: IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002

DOI

Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica

A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 15(1-4), pp. 633-636

DOI

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon

U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 19(1-4), pp. 211-214

DOI

CMOS compatible micromachining by dry silicon-etching techniques

S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 19(1-4), pp. 191-194

DOI

Matching analysis of deposition defined 50-nm MOSFET's

J. Horstmann, U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices (2002), 45(1), pp. 299-306

DOI

Applications and implementations of neural networks in microelectronics-overview and status

K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002

DOI

12 kV low current cascaded light triggered switch on one silicon chip

V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering (2002), 46(1-4), pp. 413-417

DOI

Matching analysis of deposition defined 50-nm MOSFET's

J. Horstmann, U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices (2002), 45(1), pp. 299-306

DOI

Mesoscopic transport phenomena in ultrashort channel MOSFETs

G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser, Solid-State Electronics (2002), 43(7), pp. 1245-1250

DOI

Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications

R. Otterbach, U. Hilleringmann, T. Horstmann, K. Goser, Diamond and Related Materials (2002), 10(3-7), pp. 511-514

DOI

A structure definition technique for 25 nm lines of silicon and related materials

U. Hilleringmann, T. Vieregge, J. Horstmann, Microelectronic Engineering (2002), 53(1-4), pp. 569-572

DOI

Reactive ion etching of CVD-diamond for piezoresistive pressure sensors

R. Otterbach, U. Hilleringmann, Diamond and Related Materials (2002), 11(3-6), pp. 841-844

DOI

Metallisierung und Kontakte

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, 2002, pp. 131–151

Abstract

DOI

Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen.

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2000

Nanometer Scale Lateral Structures of MOS Type Layers

U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. tec, 2000, pp. 49–53

1999

High rate CVD-diamond etching for high temperature pressure sensor applications

R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320-323

1998

Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors

J. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512-515

1997

CMOS-compatible organic light-emitting diodes

L. Heinrich, J. Muller, U. Hilleringmann, K. Goser, A. Holmes, D. Hwang, R. Stern, IEEE Transactions on Electron Devices (1997), 44(8), pp. 1249-1252

DOI

1996

Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission

J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947-950

Characterization and Matching Analysis of 50 nm-NMOS-Transistors

J.T. Horstmann, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 253-256

ESSDERC’96, Bologna, Italy

J. Horstmann, U. Hilleringmann, K. Goser, in: Conf. Dig, 1996

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1995

Conjugated Polymers for CMOS Compatible Applications

J. Muller, V. Mankowski, U. Hilleringmann, K. Goser, A. Holmes, O. Gelsen, R. Stern, in: ESSDERC ’95: Proceedings of the 25th European Solid State Device Research Conference, 1995, pp. 659-662

1994

Micromechanic Pressure Sensors with Optical Readout and CMOS-Amplifiers on Silicon

U. Hilleringmann, S. Adams, K. Goser, in: ESSDERC ’94: 24th European Solid State Device Research Conference, 1994, pp. 387-390

1993

Monolithic System Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS Amplifiers

E. Brab, U. Hilleringmann, K. Schumacher, in: ESSCIRC ’93: Nineteenth European Solid-State Circuits Conference, 1993, pp. 242-245

Hot Carrier Monitoring in NMOS Transistors by Visible Light Emission

I. Schonstein, J. Muller, U. Hilleringmann, K. Goser, in: ESSDERC ’93: 23rd European solid State Device Research Conference, 1993, pp. 421-424

Micromechanic pressure sensors with optical readout and CMOS-preamplifiers on one silicon chip: Processing and first results

U. Hilleringmann, S. Adam, K. Goser, in: ESSDtRC’93, 1993

1992

A Silicon Technology for Monolithic Integration of Optical Waveguides, Photodetectors and VLSI CMOS Circuits

U. Hilleringmann, S. Adams, K. Goser, in: Proceedings ISSSE’92, 1992, pp. 304–307

Electrooptical coupling of waveguides and VLSI circuits integrated on one silicon chip

S. Adams, U. Hilleringmann, K. Goser, in: EFOC LAN, 1992, pp. 92–92

1991

Application and implementation of neural networks in microelectronics

K. Goser, U. Hilleringmann, U. Rückert, in: Artificial Neural Networks, Springer Berlin Heidelberg, 1991, pp. 243–259

Abstract

The paper gives an overview on some of the most important artificial neural networks and their implementation as integrated circuits. The performances of these networks are dicussed with regard to the potential of current and future technologies. The overview closes with some possible applications of neural networks in microelectronics.

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