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Bebot-Roboter aus dem Fachgebiet Schaltungstechnik am Institut für Elektrotechnik, Foto: Universität Paderborn, Fotografin: Judith Kraft Bildinformationen anzeigen

Bebot-Roboter aus dem Fachgebiet Schaltungstechnik am Institut für Elektrotechnik, Foto: Universität Paderborn, Fotografin: Judith Kraft

Prof. Dr. Ulrich Hilleringmann

Kontakt
Vita
Publikationen
Prof. Dr. Ulrich Hilleringmann

DFG Graduiertenkolleg Micro- and Nanostructures in Optoelectronics and Photonics

Mitglied - Professor - Projektleiter Im DFG-Graduiertenkolleg DFG Graduiertenkolleg "Micro- and Nanostructures in Optoelectronics and Photonics"

Sensorik (SEN)

Leiter - Professor

Telefon:
+49 5251 60-2225
Fax:
+49 5251 60-5913
Büro:
P1.3.03
Sprechzeiten:

Nach Vereinbarung

Web:
Besucher:
Pohlweg 47-49
33098 Paderborn

Center for Optoelectronics and Photonics (CeOPP)

Stellvertretender Sprecher - Professor

Fraunhofer-Institut für Elektronische Nanosysteme (ENAS)

Leiter - Professor - Projektkoordination mit der Universität Paderborn

Prof. Dr. Ulrich Hilleringmann
10/1999 - heute

Prof. Dr.-Ing. habil.

Ruf an das Fachgebiet Sensorik der Universität Paderborn

10/1994 - 10/1999

Dr.-Ing. habil.

Leiter der CMOS-Entwicklung in der Abteilung Elektrotechnik der Universität Dortmund

07/1988 - 10/1994

Dr.-Ing. habil.

Habilitation in der Abteilung Elektrotechnik der Universität Dortmund

01/1986 - 06/1988

Dr.-Ing.

Promotion in der Abteilung Elektrotechnik der Universität Dortmund

05/1984 - 12/1985

Dipl.-Ing.

Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme, Duisburg

10/1978 - 04/1984

Dipl.-Ing.

Studium Diplom-Physik an der Universität Paderborn


Liste im Research Information System öffnen

2023

LoRa Transceiver for Load Monitoring and Control System in Microgrids

I. Mwammenywa, D. Petrov, P. Holle, U. Hilleringmann, in: 2022 International Conference on Engineering and Emerging Technologies (ICEET), IEEE, 2023

DOI


New Quick And Easy Publication - Will be edited by LibreCat team

U. Hilleringmann, Quick And Easy Journal Title (2023)


New Quick And Easy Publication - Will be edited by LibreCat team

U. Hilleringmann, Quick And Easy Journal Title (2023)


LoRa Transceiver for Load Monitoring and Control System in Microgrids

I. Mwammenywa, D. Petrov, P. Holle, U. Hilleringmann, in: 2022 International Conference on Engineering and Emerging Technologies (ICEET), IEEE, 2023

DOI


2022

LoRa-based Demand-side Load Monitoring and Management System for Microgrids in Africa

I. Mwammenywa, G.M. Kagarura, D. Petrov, P. Holle, U. Hilleringmann, in: 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), IEEE, 2022

DOI


Far-field Calculation from magnetic Huygens Box Data using the Boundary Element Method

C. Marschalt, D. Schroder, S. Lange, U. Hilleringmann, C. Hedayat, H. Kuhn, D. Sievers, J. Forstner, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


Far-field Calculation from magnetic Huygens Box Data using the Boundary Element Method

C. Marschalt, D. Schroder, S. Lange, U. Hilleringmann, C. Hedayat, H. Kuhn, D. Sievers, J. Forstner, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


Detection of Defects on Irregularly Structured Surfaces using Supervised and Semi-Supervised Learning Methods

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


2021

Detection of Defects on Irregular Structured Surfaces by Image Processing Methods for Feature Extraction

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, F. Gockel, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI


Development of Methods for Coil-Based Localization by Magnetic Fields of Miniaturized Sensor Platforms in Bioprocesses

S. Lange, D. Schroder, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI


A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

I.R. Kaufmann, O. Zerey, T. Meyers, J. Reker, F. Vidor, U. Hilleringmann, Nanomaterials (2021), 11(5), 1188

<jats:p>Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.</jats:p>


Influence of electrode metallization on thin-film transistor performance

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 IEEE AFRICON, IEEE, 2021

DOI


Local Power Control using Wireless Sensor System for Microgrids in Africa

U. Hilleringmann, D. Petrov, I. Mwammenywa, G.M. Kagarura, in: 2021 IEEE AFRICON, IEEE, 2021

DOI


Low-Cost NB-IoT Microgrid Power Quality Monitoring System

D. Petrov, K. Kroschewski, I. Mwammenywa, G.M. Kagarura, U. Hilleringmann, in: 2021 IEEE Sensors, IEEE, 2021

DOI


Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI


Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI


ZnO nanoparticle films as active layer for thin film transistors

U. Hilleringmann, in: Nanostructured Zinc Oxide, Elsevier, 2021

DOI


Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI


2020

Investigation of the Surface Equivalence Principle on a Metal Surface for a Near-Field to Far-Field Transformation by the NFS3000

S. Lange, D. Schroder, C. Hedayat, C. Hangmann, T. Otto, U. Hilleringmann, in: 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, IEEE, 2020

DOI


Water-based primary cell for powering of wireless sensors

D. Petrov, U. Hilleringmann, in: 2020 IEEE SENSORS, IEEE, 2020

DOI


Designing Mixed-Signal PLLs regarding Multiple Requirements taking Non-Ideal Effects into Account

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), IEEE, 2020

DOI


2019

Method of superposing a multiple driven magnetic field to minimize stray fields around the receiver for inductive wireless power transmission

S. Lange, M. Bueker, D. Sievers, C. Hedayat, J. Foerstner, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Wireless power supply for a RFID based sensor platform

M. Schmidt, D. Petrov, C. Hedayat, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Characterization of H-field Probes regarding Unwanted Field Suppression using Different Calibration Structures

D. Schroeder, C. Hangmann, C. Hedayat, T. Otto, U. Hilleringmann, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Self-aligned organic thin-film transistors for flexible electronics

T. Meyers, J. Reker, J. Temme, F.F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Inorganic p-channel thin-film transistors using CuO nanoparticles

J. Reker, T. Meyers, F..F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Oxygen detection with zinc oxide nanoparticle structures

T. Schwabe, A. Balke, P. Bezuidenhout, J. Reker, T. Meyers, T. Joubert, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Characterization of inkjet-printed dielectric on different substrates

J. Kruger, P.H. Bezuidenhout, U. Hilleringmann, T. Joubert, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


RFID based sensor platform for industry 4.0 application

D. Petrov, M. Schmidt, U. Hilleringmann, C. Hedayat, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Mechanical deformation on nanoparticle-based thin-film transistors

F.F. Vidor, T. Meyers, J. Reker, K. Müller, G.I. Wirth, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Improved organic thin-film transistor performance by dielectric layer patterning

J. Temme, T. Meyers, J. Reker, F.F. Vidor, J. Vollbrecht, H. Kitzerow, J. Paradies, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Nanoparticles and organic semiconductors for flexible electronics

U. Hilleringmann, J. Reker, F.F. Vidor, T. Meyers, T..H. Joubert, P. Bezuidenhout, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


2018

Liquid crystalline dithienothiophene derivatives for organic electronics

J. Vollbrecht, P. Oechsle, A. Stepen, F. Hoffmann, J. Paradies, T. Meyers, U. Hilleringmann, J. Schmidtke, H. Kitzerow, Organic Electronics (2018), 61, pp. 266-275

DOI


Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors

T.E. Becker, F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2018 IEEE 19th Latin-American Test Symposium (LATS), IEEE, 2018

DOI


Silizium-Halbleitertechnologie

U. Hilleringmann, Springer Fachmedien Wiesbaden, 2018

DOI


Oxidation des Siliziums

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI


Ätztechnik

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI


2017

ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics

F.F. Vidor, G.I. Wirth, U. Hilleringmann, Springer International Publishing, 2017

DOI


Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State Electronics (2017), 137, pp. 16-21

DOI


Complementary field-effect transistors for flexible electronics

U. Hilleringmann, F.F. Vidor, T. Meyers, in: SPIE Proceedings, SPIE, 2017

DOI


Self-aligned ZnO nanoparticle-based TFTs for flexible electronics

F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI


Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: IEEE Xplore, MikroSystemTechnik 2017, IEEE, 2017, pp. 1-4


Improvements

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI


Design and Implementation of a High Temperature Control Monitoring Applied to Micro Thermoelectric Generators

S. Jucá, P. Carvalho, R. Pereira, D. Petrov, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 712-717

DOI


Increasing the Efficiency of Solar Cells by Combining Silicon- and Dye Sensitized Devices

B. Ohms, A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality (2017), pp. 469-473

DOI


Conclusion and Future Perspectives

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI


Integration of ZnO nanoparticle transistors on freestanding flexible substrates

F.F. Vidor, T. Meyers, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI


TEGs as self-sufficient power supply for sensors and microelectromechanical systems

M. Schönhoff, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI


Mass production of magnesium silicide as a TEG material

M. Schonhoff, U. Hilleringmann, J. de Boor, in: 2017 IEEE AFRICON, IEEE, 2017

DOI


Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: MikroSystemTechnik 2017; Congress, 2017, pp. 1-4


2016

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

T. Meyers, F.F. Vidor, K. Brassat, J.K. Lindner, U. Hilleringmann, Microelectronic Engineering (2016), 174, pp. 35-39

DOI


Improved rf design using precise 3d near-field measurements and near-field to far-field transformations

C. Hangmann, T. Mager, S. Khan, C. Hedayat, U. Hilleringmann, in: Smart System Integration-International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2016


Microstructured Metal Layers in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6


ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering (2016), 159, pp. 155-158

DOI


High-Q whispering gallery microdisk resonators based on silicon oxynitride

T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, A. Zrenner, Journal of Luminescence (2016), 191, pp. 131-134

DOI


Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

F. Vidor, T. Meyers, U. Hilleringmann, Nanomaterials (2016), 6(9), 154

DOI


Influence of UV irradiation and humidity on a low-cost ZnO nanoparticle TFT for flexible electronics

F.F. Vidor, T. Meyers, U. Hilleringmann, G.I. Wirth, in: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), IEEE, 2016

DOI


2015

Fast and accurate event-driven simulation of a mixed-signal system using the example of a PLL

C. Hangmann, C. Hedayat, U. Hilleringmann, in: Proc. Int. Conf. Exhib. Integr. Issues Miniatured Syst., 2015


Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology

U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to Machine Communications (2015), 1(3), pp. 197-214

DOI


Application of side-wall deposition and etch-back technology for nanometer scale device integration

U. Hilleringmann, F. Vidor, F. Assion, in: Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014), IEEE, 2015

DOI


Extended event-driven modeling of a ΣΔ-fractional-N PLL including non-ideal effects

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), IEEE, 2015

DOI


2014

Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics

F. Vidor, G. Wirth, U. Hilleringmann, Microelectronics Reliability (2014), 54(12), pp. 2760-2765

DOI


Stability Analysis of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations

C. Hangmann, C. Hedayat, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2014), 61(9), pp. 2569-2577

DOI


Modeling and characterization of CP-PLL phase noise in presence of dead zone

C. Hangmann, I. Wullner, C. Hedayat, U. Hilleringmann, in: 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), IEEE, 2014

DOI


Random telegraph signal in nanoparticulated ZnO thin-film transistors

F. Vidor, G. Wirth, U. Hilleringmann, in: The 40th International Conference on Micro and Nano Engineering (MNE2014), 2014


Titanium disilicide as hot side metallization layer for thermoelectric generators

U. Hilleringmann, M. Schonhoff, F. Assion, in: 2013 Africon, IEEE, 2014

DOI


Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric Generators

F. Assion, V. Geneiß, M. Schönhoff, C. Hedayat, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 83–88

The wide usage of thermoelectric generators (TEG) is still blocked by very high product costs. This paper presents anodized aluminum (Al) as an effective and cheap alternative for ceramics like alumina (Al2O3) or aluminum nitride (AlN). Al has a significantly higher thermal conductivity as both named ceramics. In addition, the lower thermal stability of Al is still high enough to work with bismuth telluride based modules, which are most common. To show the advantages of the changed substrate, finite element method (FEM) simulations were performed. These simulations show that by changing the cold side substrate material the temperature drop across the substrate is reduced by 60 K. This correlates to a theoretical power gain of more than 20 {%}. Furthermore, Al can be shaped much easier than a ceramic material. The biggest advantage is obviously the price. Anodized Al is around twenty times cheaper than Al2O3. To demonstrate the easy fabrication of the proposed substrate, samples were prepared only with widely used processes like those used for conventional printed circuit boards.


A Flexible Measurement System for the Characterization of Thermoelectric Materials

M. Schönhoff, F. Assion, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 53–60

The figure of merit needs to be determined to rate the quality of thermoelectric materials (TM). Therefore, it is necessary to measure all involved parameters—the Seebeck coefficient (S), the thermal conductivity ($\lambda$), and the electrical conductivity ($\sigma$).


Embedded UHF RFID tag design process for rubber transmission belt using 3D model

K. Kanwar, T. Mager, U. Hilleringmann, V. Geneiss, C. Hedayat, in: 2014 IEEE RFID Technology and Applications Conference (RFID-TA), IEEE, 2014

DOI


Replacing TCO electrodes in dye sensitized solar cells by metal grids

U. Hilleringmann, A. Kleine, in: SPIE Proceedings, SPIE, 2014

DOI


Lithografie

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2014

DOI


2013

Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI


Design and analysis of UHF RFID tag for a rubber transmission belt based on 3D electrical model

K. Kanwar, V. Geneiss, T. Mager, S. Scheele, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2013 21st International Conference on Software, Telecommunications and Computer Networks - (SoftCOM 2013), IEEE, 2013

DOI


Designing output-power-optimized thermoelectric generators via analytic and finite element method modelling

F. Assion, C. Fischer, M. Schonhof, U. Hilleringmann, C. Hedayat, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI


Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI


Self-organization of nanospheres in trenches on silicon surfaces

K. Brassat, F. Assion, U. Hilleringmann, J.K.N. Lindner, physica status solidi (a) (2013), 210(8), pp. 1485-1489

DOI


Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor

F.F. Vidor, G. Wirth, F. Assion, K. Wolff, U. Hilleringmann, IEEE Transactions on Nanotechnology (2013), 12(3), pp. 296-303

DOI


Titanium Disilicide as High-Temperature Contact Material for Thermoelectric Generators

F. Assion, M. Schönhoff, U. Hilleringmann, Journal of Electronic Materials (2013), 42(7), pp. 1932-1935

DOI


Enhanced event-driven modeling of a CP-PLL with nonlinearities and nonidealities

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS), IEEE, 2013

DOI


Resistivity reduction in flexible dye sensitized solar cells by UV irradiation and carbon nanotubes

U. Hilleringmann, B. Ohms, A. Kleine, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI


Electrical characterization of rubber mixture sheets based on a coaxial probe method in combination with 3D electromagnetic simulation model

K. Kanwar, C. Fischer, V. Geneiss, T. Mager, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2012 IEEE International Conference on RFID-Technologies and Applications (RFID-TA), IEEE, 2013

DOI


Design and implementation of a measurement system for automatically measurement of electrical parameters of thermoelectric generators

D. Petrov, F. Assion, U. Hilleringmann, MRS Proceedings (2013), 1490, pp. 191-196

<jats:title>ABSTRACT</jats:title><jats:p>The continues development of thermoelectric generators causes a permanent improvement of their characteristics. New types of thermoelectric generators can work at temperatures up to 1000 K. With this, special measurement equipment is needed to control the electrical parameters of the new developed specimens. The devices must be tested over the whole range of operating temperatures. For each temperature value a series of electrical measurements has to be performed. To establish the maximal output power of the thermoelectric generators, a load resistor with variable resistance has to be connected to the output of thermoelectric generator. The measurement system should measure the electrical current through the load resistor and the voltage over this resistor to determine the device parameters. A large amount of measurement data have to be collected and processed to evaluate the electrical characteristics of the specimen and to present them in graphical form, suitable for the comparison with others specimens.</jats:p>


Formation and Properties of TiSi<sub>2</sub> as Contact Material for High-Temperature Thermoelectric Generators

F. Assion, M. Schönhoff, U. Hilleringmann, MRS Proceedings (2013), 1490, pp. 97-102

<jats:title>ABSTRACT</jats:title><jats:p>Thermoelectric generators (TEG) are capable of transforming waste heat directly into electric power. With higher temperatures the yield of the devices rises which makes high-temperature contact materials important. The formation of titanium disilicide (TiSi<jats:sub>2</jats:sub>) and its properties were analyzed and optimized for the use in TEG. Depending on a direct or an indirect transformation into the C54 crystal structure the process forms a layer with a resistivity of 20-22 μΩcm. Process gases influence the resistivity and result in difference of 20 %. The growing rate of TiSi<jats:sub>2</jats:sub>on silicon dioxide was determined; it shows a strong dependence on the used atmosphere and temperature. A maximum overgrowing length of 30 μm was found.</jats:p>


2012

Mikrosystemtechnik auf Silizium

U. Hilleringmann, Vieweg+Teubner Verlag, 2012

DOI


Surface tension and its role for vertical wet etching of silicon

A. Brockmeier, F.J.S. Rodriguez, M. Harrison, U. Hilleringmann, Journal of Micromechanics and Microengineering (2012), 22(12), 125012

DOI


Surface tension and its role for vertical wet etching of silicon

A. Brockmeier, F.J.S. Rodriguez, M. Harrison, U. Hilleringmann, Journal of Micromechanics and Microengineering (2012), 22(12), 125012

DOI


2011

Piezoelectric sensor array with evaluation electronic for counting grains in seed drills

S. Meyer zu Hoberge, U. Hilleringmann, C. Jochheim, M. Liebich, in: IEEE Africon '11, IEEE, 2011

DOI


Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors

F.F. Vidor, G.I. Wirth, K. Wolff, U. Hilleringmann, ECS Transactions (2011), 39(1), pp. 109-115

<jats:p>Due to the electrical, sensory and optical properties the interest on ZnO-based devices including thin-film transistors (TFT) aroused. The main concerns, when using ZnO nanoparticles (NP-ZnO) in TFT, are the low charge carrier mobility and the hysteresis when poly(4-vinylphenol) (PVP) is used as gate dielectric. It is well-known that the mobility in NP-ZnO films can be enhanced by the subsequent hydrothermal decomposition of zinc salts. The electrical behavior as a function of time and temperature is investigated, taking the NP-ZnO without addition of zinc acetate as reference. The addition of zinc acetate leads to a device with better performance, with increased drain current level and without the presence of the hysteresis in the transfer characteristic. The formation reaction was performed at a temperature of 200°C, which enables process compatibility to some plastic substrates.</jats:p>


Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric

K. Wolff, U. Hilleringmann, Solid-State Electronics (2011), 62(1), pp. 110-114

DOI


Characterization of SiON integrated waveguides via FTIR and AFM measurements

T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in: 2011 Semiconductor Conference Dresden, IEEE, 2011

DOI


Modeling and simulation of arbitrary ordered nonlinear charge-pump phase-locked loops

C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2011 Semiconductor Conference Dresden, IEEE, 2011

DOI


Semiconductor nanoparticles for electronic device integration on foils

U. Hilleringmann, K. Wolff, F. Assion, F.F. Vidor, G.I. Wirth, in: IEEE Africon '11, IEEE, 2011

DOI


Plane wave spectrum expansion from near-field measurements on no-planar lattices

C. Reinhold, C. Hangmann, T. Mager, C. Hedayat, U. Hilleringmann, in: Proc. 5th Int. Conf. on electromagnetic Near-field Characterization and Imaging (ICONIC) 2011, 2011, pp. 1–4


2010

Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications

C. Pannemannn, T. Diekmann, U. Hilleringmann, Advances in Radio Science (2010), 1, pp. 219-221

<jats:p>Abstract. This letter presents organic thin-film-transistors (OTFT) using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V. </jats:p>


Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate

F. Assion, K. Wolff, U. Hilleringmann, in: Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain, 2010, pp. 17


A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS

C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, Smart System Integration SSI 2010 (2010)


Non-linear behaviour of charge-pump phase-locked loops

C. Wiegand, C. Hedayat, U. Hilleringmann, Advances in Radio Science (2010), 8, pp. 161-166

<jats:p>Abstract. The analysis of the mixed analogue and digital structure of charge-pump phase-locked loops (CP-PLL) is a challenge in modelling and simulation. In most cases the system is designed and characterized using its continuous linear model or its discrete linear model neglecting its non-linear switching behaviour. I.e., the time-varying model is approximated by a time-invariant representation using its average dynamics. Depending on what kind of phase detector is used, the scopes of validity of these approximations are different. Here, a preeminent characterization and simulation technique based on the systems event-driven feature is presented, merging the logical and analogue inherent characteristics of the system. In particular, the high-grade non-linear locking process and the dead-zone are analyzed. </jats:p>


Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors

K. Wolff, U. Hilleringmann, in: 2010 Proceedings of the European Solid State Device Research Conference, IEEE, 2010

DOI


Telemetric surface acoustic wave sensor for humidity

M. Dierkes, U. Hilleringmann, Advances in Radio Science (2010), 1, pp. 131-133

<jats:p>Abstract. Surface acoustic wave sensors consist of a piezoelectric substrate with metal interdigital transducers (IDT) on top. The acoustic waves are generated on the surface of the substrate by a radio wave, as it is well known in band pass filters. The devices can be used as wireless telemetric sensors for temperature and humidity, transmitting the sensed signal as a shift of the sensor’s resonance frequency. </jats:p>


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